? 2010 ixys corporation, all rights reserved ds99908b(01/10) v dss = 1200v i d25 = 24a r ds(on) 340m t rr 300ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 100 a i a t c = 25 c16a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ i isol 1ma t = 1s 3000 v~ f c mounting force 40..120/4.5..27 n/lb. weight 8g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1200 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 300 na i dss v ds = v dss , v gs = 0v 50 a note 2, t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 16a, note 1 340 m IXFL32N120P polar tm hiperfet tm power mosfet ( electrically isolated tab) features z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z avalanche rated z fast intrinsic diode advantages z easy assembly z space savings z high power density applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls preliminary technical information isoplus i5-pak tm g s d g = gate d = drain s = source isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFL32N120P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 16a, note 1 17 29 s c iss 21 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1105 pf c rss 77 pf r gi gate input resistance 0.84 t d(on) 70 ns t r 62 ns t d(off) 88 ns t f 51 ns q g(on) 360 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 16a 130 nc q gd 160 nc r thjc 0.24 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.9 c i rm 15.0 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 16a r g = 1 (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. isoplus i5-pak tm (ixfl) outline pin 1 = gate pin 2 = source pin 3 = drain tap 4 = electricall isolated 2500v sym inches millimeter min max min max a 0.190 0.205 4.83 5.21 a1 0.102 0.118 2.59 3.00 a2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 d 1.020 1.040 25.91 26.42 e 0.770 0.799 19.56 20.29 e 0.150 bsc 3.81 bsc e1 0.450 bsc 11.43 bsc l 0.780 0.820 19.81 20.83 l1 0.080 0.102 2.03 2.59 q 0.210 0.235 5.33 5.97 q1 0.490 0.513 12.45 13.03 r 0.150 0.180 3.81 4.57 r1 0.100 0.130 2.54 3.30 s 0.668 0.690 16.97 17.53 t 0.801 0.821 20.34 20.85 u 0.065 0.080 1.65 2.03 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp ices measurement.
? 2010 ixys corporation, all rights reserved IXFL32N120P fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 012345678910 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics t j = 125oc 0 4 8 12 16 20 24 28 32 0 2 4 6 8 10121416182022 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 10203040506070 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFL32N120P fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.30.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 q g - nanocoulombs v gs - volts v ds = 600v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forwar-bias safe operating area 0.01 0.1 1 10 100 1000 10 100 1,000 10,000 v ds - volts i d - amperes r ds(on) limit dc 100ms 10ms 1ms 100s 25s t j = 150oc tc = 25oc single pulse
? 2010 ixys corporation, all rights reserved ixys ref: f_32n120p(99)1-22-10-c IXFL32N120P fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w
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